BF459 DATASHEET PDF

BF Transistor Datasheet pdf, BF Equivalent. Parameters and Characteristics. BF Datasheet, BF NPN High Voltage Transistor Datasheet, buy BF Transistor. BF BF; BF; NPN High-voltage Transistors. FEATURES Low current ( max. mA) High voltage (max. V).. APPLICATIONS Intended for video.

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V SCA63 All rights are reserved. NPN general-purpose transistors in small plastic packages. NPN medium power transistor. Description High voltage fast-switching NPN vatasheet transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.

NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.

Philips Semiconductors Philippines Inc. N-channel enhancement mode field-effect transistor Rev. Exposure to limiting values for extended periods may affect device reliability.

Hotel Minsk Business Center, Bld. Description in a plastic package using TrenchMOS technology. Suitable for applications requiring low noise and good h FE linearity, eg.

New Jersey Semiconductor

All leads are isolated More information. They are designed for high speed More information. A linear amplifier 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

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Product specification Supersedes data of Sep Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 21 5. Product specification Supersedes data dstasheet Dec Metal to silicon satasheet, majority carrier conduction. General description PNP general-purpose transistors.

High voltage fast-switching NPN power transistor. Easy pick and place. Product data sheet Supersedes data of May Bg459 are designed for high speed. Publication thereof datwsheet not convey nor imply any license under patent- or other industrial or intellectual property rights.

BoxTelFax Belarus: Product specification Supersedes data of Dec 06″. Philips Semiconductors, 6F, No. Product specification Supersedes data of Aug Product data sheet Supersedes data of Jan Characteristic Symbol Rating Unit.

Stress above one or more of the limiting values may cause permanent damage to the device. General description NPN general-purpose transistors.

BF datasheet & applicatoin notes – Datasheet Archive

Product overview Type number. Designed for general-purpose amplifier and low speed switching applications.

High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications.

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No liability will be accepted by the publisher for any consequence of its use. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.

Low voltage NPN power Darlington transistor. To use this website, you must agree to our Privacy Policyincluding cookie policy. High-speed switching No secondary breakdown. High oltage Switching Features: Quick reference data Rev.

BF NTE Equivalent NTE NPN audio transistor – Wholesale Electronics

Secondary protection for DSL lines. Please v isit our website for pricing and availability at www. Product data sheet Supersedes data of Oct The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

Product overview Type number More information. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Product specification Supersedes data of May Low forward voltage drop. RF transistor with internal bias circuit. Low voltage PNP power transistor.